Quantitative Depth Profiling of an Alternating Pt/Co Multilayer and a Pt Co Alloy multilayer by SIMS using a Buckminsterfullerene (C60) Source

Published

May 15, 2007

Author(s)

K.J. Kim, David S. Simons, J Greg Gillen

Abstract

Buckmins erfullerene ion beam has been applied o he dep h profiling of an al erna ing pure P and pure Co mul ilayer. Quan i a ive dep h profiling was performed by secondary ion mass spec rome ry (SIMS) wi h C60 ions using P Co alloy films wi h differen composi ions. Rela ive sensi ivi y fac ors (RSFs) derived from a P 39Co61 alloy film were used o conver an original dep h profile o a composi ion dep h profile. A severe in erface ar ifac observed in he dep h profile of a P /Co mul ilayer was quan i a ively correla ed wi h a gradual varia ion of ma rix composi ion hrough he P /Co and Co/P in erfaces by comparison wi h he dep h profiling of an alloy mul ilayer film. Moreover, he in erface ar ifac could be compensa ed by conversion of he profile o a composi ion profile using he same RSFs. The dep h resolu ions of a P /Co mul ilayer derived from he composi ion dep h profile were much larger han he apparen in erface wid hs measured from he original dep h profile due o he nonlinear rela ionship be ween he Co and P ion in ensi ies and heir composi ions.

Citation

Applied Surface Science

Volume

253

Issue

14

Pub Type

Journals

Keywords

Buckminsterfullerene ion, SIMS quantification, Depth profiling, Interface artifact

Citation

Kim, K. , Simons, D. and Gillen, J. (2007), Quantitative Depth Profiling of an Alternating Pt/Co Multilayer and a Pt Co Alloy multilayer by SIMS using a Buckminsterfullerene (C60) Source, Applied Surface Science (Accessed October 14, 2025)