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Predictive Model for Scanned Probe Oxidation Kinetics



John A. Dagata, F Perez-murano, G Abadal, K Morimoto, T Inoue, J Itoh, H Yokoyama


Previous descriptions of scanned probe oxidation kinetics involved implicit assumptions that one-dimensional, steady-state models apply for arbitrary values of applied voltage and pulse duration. These assumptions have led to inconsistent interpretations regarding the fundamental processes that contribute to control of oxide growth rate. We propose a new model that includes a temporal cross-over of the system from transient to steady-state growth and a spatial cross-over from predominantly vertical to coupled lateral growth. The model provides an excellent fit of available experimental data.
Applied Physics Letters


field-enhanced oxidation, kinetics, nanofabrication, scanned probe microscopy, silicon.


Dagata, J. , Perez-murano, F. , Abadal, G. , Morimoto, K. , Inoue, T. , Itoh, J. and Yokoyama, H. (2000), Predictive Model for Scanned Probe Oxidation Kinetics, Applied Physics Letters (Accessed June 21, 2024)


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Created January 1, 2000, Updated February 19, 2017