Vogelgesang, R.
, Grimsditch, M.
and Wallace, J.
(2002),
Polarized Ultraviolet Raman Spectroscopy of Β-Si<sub>3</sub>N<sub>4</sub>, Journal of Applied Physics
(Accessed October 18, 2025)
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Polarized Ultraviolet Raman Spectroscopy of Β-Si3N4
Published
Author(s)
R Vogelgesang, M Grimsditch,
Abstract
We have studied single crystals of Β-Si3N4 with polarization-resolved Raman spectroscopy in order to unambiguously obtain the symmetry character of zone center optical phonon modes. By applying ultraviolet excitation radiation, approaching resonance condition, we have overcome the usual difficulties with overwhelming fluorescence obscuring Raman spectra of Β-Si3N4 in the visible. Superior extinction ratios have been achieved and the application of group theory allows us to assign ten out of eleven Raman-active modes in excellent correlation with recent theoretical results. The probable nature of the eleventh mode is discussed.Citation
Journal of Applied Physics
Volume
92
Issue
No. 6
Pub Type
Journals
Keywords
elastic modulus, Raman, Si<sub>3</sub>N<sub>4</sub>, silicon, spectroscopy
Citation
Issues
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Created August 31, 2002, Updated October 12, 2021