Tewary, V.
(2011),
Phenomenological interatomic potentials for silicon, germanium and their binary alloy, Physics Letters A, [online], https://doi.org/10.1016/j.physleta.2011.08.054
(Accessed April 18, 2024)
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Phenomenological interatomic potentials for silicon, germanium and their binary alloy
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Abstract
A phenomenological potential is constructed for interatomic interactions in silicon, germanium, and their binary alloy. The potential is based upon the same physical principles as the modified embedded atom potential (MEAM) but is different in details and implementation, particularly in the radial part. It has seven adjustable parameters in contrast to 10 or more in MEAM. The potential gives perfect fit with the measured values of seven most important quantities for characterizing strained silicon: cohesive energy, equilibrium lattice constant, unrelaxed vacancy formation energy, Raman frequency, and the three elastic constants. The potential should therefore be suitable for modeling strained silicon.Citation
Physics Letters A
Pub Type
Journals
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Keywords
elastic constants, germanium, interatomic potential, modified embedded atom model, silicon
Citation
Created October 17, 2011, Updated November 10, 2018