Halloran, S.
, da Silva, F.
, Fardi, H.
and Pappas, D.
(2007),
Permanent-Magnet-Free Stabilization and Sensitivity Tailoring of Magneto-resistive Field Sensors, Journal of Applied Physics, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32605
(Accessed December 12, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Permanent-Magnet-Free Stabilization and Sensitivity Tailoring of Magneto-resistive Field Sensors
Published
Author(s)
, Fabio C. da Silva, Hamid Z. Fardi,
Abstract
In this work, we have exploited the coupling across a ruthenium spacer between a ferromagnetic layer and an antiferromagnetic layer to stabilize the magnetization and tailor the magnetic gain of the sensor for various applications. Because the structure is deposited as a single stack, it significantly reduces the number of patterning steps relative to a permanent magnet biased scheme. Ruthenium is used as the buffer layer and is self aligned with the ferromagnetic (NiFe) free layer and antiferromagnetic (IrMn) pinning layer and the thickness is varied to change the slope of the transfer curve in the linear region, i.e. the sensitivity. The results show that this biasing scheme is well suited for barber pole and soft adjacent layer anisotropic magnetoresistance sensing elements used in magnetic field sensors.Citation
Journal of Applied Physics
Volume
102
Pub Type
Journals
Download Paper
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created August 1, 2007, Updated October 12, 2021