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Overview of Metrology for the Semiconductor Industry at the National Institute of Standards and Technology

Published

Author(s)

Stephen Knight

Abstract

Semiconductor metrology developments at NIST have been conducted since the 1950s, covering a wide range of topics, including investigation of the causes of second breakdown in bipolar transistors, development of the four point probe technique for resistivity measurements, the production of Standard Reference Materials (SRMs) for resistivity, film thickness, and ion implant, to calorimetry for deep ultraviolet (DUV) and extreme ultraviolet (EUV) laser radiation. Currently the total effort of relevance to the semiconductor manufacturing industry and its supporting infrastructure is approximately $31M per year. This overview presentation covers the major programs underway, and highlights the various ways industry can partner with NIST to obtain critically needed metrology techniques, artifacts, calibration services, and results.
Proceedings Title
GOMAC Tech-: Countering Asymmetric Threats
Volume
1
Conference Dates
March 31-April 4, 2003
Conference Location
Tampa, FL
Conference Title
GOMACTech - 03 Volume 1 (previously published as the GOMAC Digest of Technical Papers - Volumes 1 - XXVII (1968-2002)

Keywords

electronic, metrology, calibration, characterization, collaborate, semiconductor

Citation

Knight, S. (2003), Overview of Metrology for the Semiconductor Industry at the National Institute of Standards and Technology, GOMAC Tech-: Countering Asymmetric Threats, Tampa, FL, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=31263 (Accessed May 26, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created April 4, 2003, Updated January 27, 2020