Optimizing GMR Spin Valves: The Outlook for Improved Properties

Published

June 1, 1998

Author(s)

William F. Egelhoff Jr., P J. Chen, Cedric J. Powell, D Parks, Robert McMichael, J Judy, D Martien, A. E. Berkowitz, J M. Daughton

Abstract

The current generation of giant magnetoresistance (GMR) spin valves exhibits performance characteristics which are not quite as good as desired for ultrahigh-density nonvolatile memory applications. This paper addresses the scientific issues underlying the challenge of making major improvements in the future generations of GMR spin valves, assesses the likelihood of making such improvements, and will outline some of the trade-offs in spin valve properties that will probably have to be made in memory applications. In our research on the underlying scientific issues, we have found that many of the magnetic and magnetoresistive properties of spin valves are strongly influenced by surface and interface effects occurring during film deposition.

Proceedings Title

Proceedings of the 1998 International Nonvolatile Memory Technology Conference

Conference Dates

June 22-24, 1998

Conference Location

Undefined

Conference Title

IEEE International Nonvolatile Memory Technology Conference

Pub Type

Conferences

Keywords

giant magnetoresistance (GMR), magnetoresistive properties surfactants, spin valves, surface and interface effects

Citation

Egelhoff Jr., W. , Chen, P. , Powell, C. , Parks, D. , McMichael, R. , Judy, J. , Martien, D. , Berkowitz, A. and Daughton, J. (1998), Optimizing GMR Spin Valves: The Outlook for Improved Properties, Proceedings of the 1998 International Nonvolatile Memory Technology Conference, Undefined (Accessed October 21, 2025)