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Optimizing GMR Spin Valves: The Outlook for Improved Properties

Published

Author(s)

William F. Egelhoff Jr., P J. Chen, Cedric J. Powell, D Parks, Robert McMichael, J Judy, D Martien, A. E. Berkowitz, J M. Daughton

Abstract

The current generation of giant magnetoresistance (GMR) spin valves exhibits performance characteristics which are not quite as good as desired for ultrahigh-density nonvolatile memory applications. This paper addresses the scientific issues underlying the challenge of making major improvements in the future generations of GMR spin valves, assesses the likelihood of making such improvements, and will outline some of the trade-offs in spin valve properties that will probably have to be made in memory applications. In our research on the underlying scientific issues, we have found that many of the magnetic and magnetoresistive properties of spin valves are strongly influenced by surface and interface effects occurring during film deposition.
Proceedings Title
Proceedings of the 1998 International Nonvolatile Memory Technology Conference
Conference Dates
June 22-24, 1998
Conference Location
Undefined
Conference Title
IEEE International Nonvolatile Memory Technology Conference

Keywords

giant magnetoresistance (GMR), magnetoresistive properties surfactants, spin valves, surface and interface effects

Citation

Egelhoff Jr., W. , Chen, P. , Powell, C. , Parks, D. , McMichael, R. , Judy, J. , Martien, D. , Berkowitz, A. and Daughton, J. (1998), Optimizing GMR Spin Valves: The Outlook for Improved Properties, Proceedings of the 1998 International Nonvolatile Memory Technology Conference, Undefined (Accessed April 15, 2024)
Created May 31, 1998, Updated October 12, 2021