Optical constants and spatial uniformity of thermally grown oxide layer of custom, induced-junction, silicon photodiodes for a predictable quantum efficient detector

Published

June 28, 2013

Author(s)

Malcolm G. White

Abstract

We have investigated the optical properties of self-induced inversion-layer silicon photodiodes using spectroscopic ellipsometric measurement techniques. We report a self-consistent data set and dispersion relation for the optical constants of the thermally grown oxide layer. The oxide layer thickness and spatial uniformity of a series of custom manufactured 22 mm × 11 mm rectangular diodes are evaluated. These photodiodes are used in a light trapping arrangement and exhibit predictable quantum efficiency and thus, predictable spectral responsivity. For comparison, we report measurements of the absolute spatial uniformity of the oxide layer on commercial "S6337" and "S1337" radiometric quality photodiodes.

Citation

Journal of Applied Physics

Volume

113

Issue

24

Pub Type

Journals

Download Paper

https://doi.org/10.1063/1.4812497

Keywords

ellipsometric, oxide thickness, optical constants, self-induced photodiode

Citation

White, M. (2013), Optical constants and spatial uniformity of thermally grown oxide layer of custom, induced-junction, silicon photodiodes for a predictable quantum efficient detector, Journal of Applied Physics, [online], https://doi.org/10.1063/1.4812497 (Accessed January 18, 2025)