Parker, C.
, Roberts, J.
, Bedair, S.
, Reed, M.
, Liu, S.
, El-Masry, N.
and Robins, L.
(1999),
Optical Band Gap Dependence on Composition and Thickness of In<sub>x</sub>Ga<sub>1-x</sub>N(0 {less than} x {less than} 0.25) Grown on GaN, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=850339
(Accessed May 28, 2024)
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Optical Band Gap Dependence on Composition and Thickness of InxGa1-xN(0 less than} x less than} 0.25) Grown on GaN
Published
Author(s)
C A. Parker, J C. Roberts, S M. Bedair, M J. Reed, S X. Liu, N A. El-Masry,
Abstract
Band gap measurements have been carried out in strained and relaxed InxGa1-xN epilayers with x > 0.25. Values of x were determined from x-ray diffraction (XRD) of relaxed films. Band gaps measured by both Photoluminenscence (PL) and optical transmission measurements gave equivalent results, indicating the absence of a Stokes shift. Bowing parameters for both strained and relaxed films were determined to be 3.42 eV and 4.11 eV, respectively. The dependence of the band gap shift, Δ}eg, on strain is presented. The dependence of the opticla properties of InGaN on film thickness will also be discussed.Citation
Applied Physics Letters
Volume
75
Issue
No. 17
Pub Type
Journals
Download Paper
Keywords
band gap, indium gallium nitride, metalorganic chemical vapor deposition, optical properties, optical transmission, photoluminescence, strain, x-ray diffraction
Citation
Issues
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Created September 30, 1999, Updated October 15, 2021