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Optical Band Gap Dependence on Composition and Thickness of InxGa1-xN(0 less than} x less than} 0.25) Grown on GaN

Published

Author(s)

C A. Parker, J C. Roberts, S M. Bedair, M J. Reed, S X. Liu, N A. El-Masry, Larry Robins

Abstract

Band gap measurements have been carried out in strained and relaxed InxGa1-xN epilayers with x > 0.25. Values of x were determined from x-ray diffraction (XRD) of relaxed films. Band gaps measured by both Photoluminenscence (PL) and optical transmission measurements gave equivalent results, indicating the absence of a Stokes shift. Bowing parameters for both strained and relaxed films were determined to be 3.42 eV and 4.11 eV, respectively. The dependence of the band gap shift, Δ}eg, on strain is presented. The dependence of the opticla properties of InGaN on film thickness will also be discussed.
Citation
Applied Physics Letters
Volume
75
Issue
No. 17

Keywords

band gap, indium gallium nitride, metalorganic chemical vapor deposition, optical properties, optical transmission, photoluminescence, strain, x-ray diffraction

Citation

Parker, C. , Roberts, J. , Bedair, S. , Reed, M. , Liu, S. , El-Masry, N. and Robins, L. (1999), Optical Band Gap Dependence on Composition and Thickness of In<sub>x</sub>Ga<sub>1-x</sub>N(0 {less than} x {less than} 0.25) Grown on GaN, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=850339 (Accessed June 14, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created September 30, 1999, Updated October 15, 2021