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Observation of Monolayer and Bilayer Period RHEED Oscillations During Epitaxial Growth on Ge and Ge(100)

Published

Author(s)

C L. Berrie, S R. Leone

Abstract

Both monolayer and bilayer periods are observed during the growth of germanium on Ge(1 0 0) using reflection high-energy electron diffraction (RHEED). Oscillations in the specular beam intensity of the RHEEd pattern are recorded for substrate temperatures of 400-850 K over a wide range of incident germanium fluxes. With careful sample preparation, the period of the RHEEd oscillations consistently goes through a transition from a bilayer period to an alternating intensity monolayer period as the surface temperature is raised above 700 K. Without this preparation, only bilayer periods characterized by symmetric-shaped oscillations are observed. This indicates that the sample preparation plays a key role in determining the resulting growth. The period of the RHEED oscillations is not strongly dependent on the incident angle of the electron beam, suggesting that the observed periods are not a result of a diffraction condition, such as Kikuchi lines. The data are consistent with a mobility-controlled dynamic bilayer versus monolayer growth mechanism.
Citation
Journal of Crystal Growth
Volume
216
Issue
No. 1-4

Keywords

elemental semiconductor processing, germanium, molecular beam epitaxy, RHEED

Citation

Berrie, C. and Leone, S. (2000), Observation of Monolayer and Bilayer Period RHEED Oscillations During Epitaxial Growth on Ge and Ge(100), Journal of Crystal Growth (Accessed April 15, 2024)
Created June 30, 2000, Updated October 12, 2021