Niobium-silicide Junction technology for superconducting digital electronics

Published

June 15, 2009

Author(s)

David I. Olaya, Paul D. Dresselhaus, Samuel P. Benz

Abstract

Digital superconducting electronics (SCE), which allows for very low power consumption and fast switching speeds, are a promising technology to deliver ultra-high performance computation. Currently, the preferred technology for junctions in SCE consists of Nb/AlOx/Nb tunnel junctions. Important developments have been achieved using this technology. Further improvements rely on increased speed and circuit density by means of fabricating higher critical current density (Jc) junctions and reducing circuit dimensions. As an alternative to these tunnel junctions, we propose a technology based on Nb/NbxSi1-x/Nb junctions, with barriers near the metal-insulator transition. Tuning both the composition and thickness of the barrier allows for a large range of junction properties, this control of the barrier has demonstrated good targeting of properties and good reproducibility.

Proceedings Title

Institute of Electronics, Information and Communication Engineers (IEICE) Transactions on Electronics

Conference Dates

June 15-17, 2009

Conference Location

Fukuoka

Conference Title

2nd Superconducting SFQ VLSI Workshop 2009

Pub Type

Conferences

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Keywords

Josephson arrays, Josephson devices, Josephson logic, Niobium, Quantization, Standards, Superconducting devices, Superconducting device fabrication

Citation

Olaya, D. , Dresselhaus, P. and Benz, S. (2009), Niobium-silicide Junction technology for superconducting digital electronics, Institute of Electronics, Information and Communication Engineers (IEICE) Transactions on Electronics, Fukuoka, -1, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=902822 (Accessed April 2, 2025)