NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.

Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.

U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

PUBLICATIONS

NiO: A Charge Transfer or Mott-Hubbard Insulator

Published

Author(s)

T M. Schuler, D L. Ederer, S Itza-Ortiz, G T. Woods, T A. Callcott, Joseph Woicik

Abstract

Using site-specific soft x-ray emission and absoroption spectroscopy in conjunction with site-specific x-ray photoelectron spectroscopy, we measure the magnitude of the insulating band gap of NiO to be approximately 2.0 eV, comparable to that predicted by our density-functional theory calculations, and note that the insulating character of NiO arises from a mixture of charge-transfer and Mott-Hubbard character corresponding to the Zaanen-Sawatsky-Allen model.
Citation
Physical Review Letters
Pub Type
Journals

Keywords

Density of states (DOS), Mott-Hubbard, Ni 3d, NiO
Ceramics and Biomaterials

Citation

Schuler, T. , Ederer, D. , Itza-Ortiz, S. , Woods, G. , Callcott, T. and Woicik, J. (2021), NiO: A Charge Transfer or Mott-Hubbard Insulator, Physical Review Letters (Accessed October 14, 2025)

Issues

If you have any questions about this publication or are having problems accessing it, please contact [email protected].

Created October 12, 2021
Was this page helpful?