Skip to main content

NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.

Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.

U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

A New Technique for Determining Long-Term TDDB Acceleration Parameters of Thin Gate Oxides

Published

Author(s)

Y Chen, John S. Suehle, Chien-Chung Shen, J B. Bernstein, C. Messick, P Chaparala

Abstract

A new technique, the dual voltage versus time curve (V-t) integration technique, is presented as a much faster method to obtain time-dependent dielectric breakdown (TDDB) acceleration parameters ([alpha] and [tau]) of ultra-thin gate oxides compared to conventional long-term constant voltage stress tests. The technique uses V-t curves measured during highly accelerated constant or ramped current injection breakdown tests. It is demonstrated that the technique yields acceleration parameters that are statistically identical to values obtained from long-term constant voltage TDDB tests. In contrast to traditional TDDB tests, the proposed technique requires over an order of magnitude less testing time, a smaller sample size, and can be used during production monitoring.
Citation
IEEE Electron Device Letters
Volume
19
Issue
7

Keywords

accelerated stress test, dielectric breakdown, reliability, silicon dioxide

Citation

Chen, Y. , Suehle, J. , Shen, C. , Bernstein, J. , Messick, C. and Chaparala, P. (1998), A New Technique for Determining Long-Term TDDB Acceleration Parameters of Thin Gate Oxides, IEEE Electron Device Letters (Accessed October 15, 2025)

Issues

If you have any questions about this publication or are having problems accessing it, please contact [email protected].

Created June 30, 1998, Updated October 12, 2021
Was this page helpful?