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A New Technique for Determining Long-Term TDDB Acceleration Parameters of Thin Gate Oxides

Published

Author(s)

Y Chen, John S. Suehle, Chien-Chung Shen, J B. Bernstein, C. Messick, P Chaparala

Abstract

A new technique, the dual voltage versus time curve (V-t) integration technique, is presented as a much faster method to obtain time-dependent dielectric breakdown (TDDB) acceleration parameters ([alpha] and [tau]) of ultra-thin gate oxides compared to conventional long-term constant voltage stress tests. The technique uses V-t curves measured during highly accelerated constant or ramped current injection breakdown tests. It is demonstrated that the technique yields acceleration parameters that are statistically identical to values obtained from long-term constant voltage TDDB tests. In contrast to traditional TDDB tests, the proposed technique requires over an order of magnitude less testing time, a smaller sample size, and can be used during production monitoring.
Citation
IEEE Electron Device Letters
Volume
19
Issue
7

Keywords

accelerated stress test, dielectric breakdown, reliability, silicon dioxide

Citation

Chen, Y. , Suehle, J. , Shen, C. , Bernstein, J. , Messick, C. and Chaparala, P. (1998), A New Technique for Determining Long-Term TDDB Acceleration Parameters of Thin Gate Oxides, IEEE Electron Device Letters (Accessed May 30, 2024)

Issues

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Created June 30, 1998, Updated October 12, 2021