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A New Method of Extracting the Channel Length from the Gate Current of P-Channel MOSFETs

Published

Author(s)

Jin S. Kim
Citation
Solid-State Electronics
Volume
33
Issue
8

Citation

Kim, J. (1990), A New Method of Extracting the Channel Length from the Gate Current of P-Channel MOSFETs, Solid-State Electronics (Accessed June 22, 2024)

Issues

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Created December 31, 1990, Updated February 17, 2017