New Insights into Threshold Voltage Shifts for Ultrathin Gate Oxides

Published

October 15, 2004

Author(s)

Da-Wei Heh, Eric M. Vogel, J B. Bernstein

Abstract

Threshold voltage (Vth) shifts of p- and n-channel MOSFETs during a stress are analyzed from both experiment and simulation. The result of the analysis showed that Vth shift is mainly induced by the carrier channel mobility degradation. This result can explain the polarity dependence of Vth shifts in p- and n-channel MOSFETs. Besides, it suggested that the commonly accepted idea that Vth shifts are due to Coulombic charge generation in the oxide affecting the surface potential is not accurate. It also suggested that proposed oxide degradation mechanisms based on Vth shifts measured using Id-Vg may not be accurate.

Proceedings Title

IEEE International Integrated Reliability Workshop Final Report

Conference Dates

October 18-21, 2004

Conference Location

Fallen Leaf, CA, USA

Conference Title

IEEE International Integrated Reliability Workshop

Pub Type

Conferences

Keywords

threshold voltage shift, polarity dependence, flat band voltage shift, interface trap, mobility degradation, simulation.

Citation

Heh, D. , Vogel, E. and Bernstein, J. (2004), New Insights into Threshold Voltage Shifts for Ultrathin Gate Oxides, IEEE International Integrated Reliability Workshop Final Report, Fallen Leaf, CA, USA (Accessed October 15, 2025)