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A new approach to electrically detected magnetic resonance: spin dependent transient spectroscopy

Published

Author(s)

Kenneth Myers, Patrick Lenahan, James Ashton, Jason Ryan

Abstract

Electrically detected magnetic resonance (EDMR) is arguably the most sensitive method available to study electrically active point defects in semiconductor devices. Most EDMR studies have utilized spin dependent recombination current and thus require p-n junctions or a photoconductive structure. Some time ago, Chen and Lang proposed and demonstrated EDMR via spin dependent deep level transient spectroscopy in metal-oxide-semiconductor (MOS) capacitors. We report on a similar and significantly simpler technique: spin dependent transient spectroscopy (SDTS). We show that the sensitivity of this technique is independent of the resonance field and frequency. Through capacitance-voltage analysis, combined with our SDTS results, this technique can (crudely) provide information about the density of states of defects with a broad distribution of energy levels. In addition, we show that SDTS can be readily adapted to near-zero-field magnetoresistance effect measurements.
Citation
Journal of Applied Physics
Volume
132
Issue
11

Keywords

Magnetic Resonance, Electron Spin Resonance, Electrically detected magnetic resonacne

Citation

Myers, K. , Lenahan, P. , Ashton, J. and Ryan, J. (2022), A new approach to electrically detected magnetic resonance: spin dependent transient spectroscopy, Journal of Applied Physics, [online], https://doi.org/10.1063/5.0101852, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=935016 (Accessed December 3, 2022)
Created September 15, 2022, Updated November 29, 2022