Skip to main content

NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.

Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.

U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

The Negative Bias Temperature Instability vs. High-Field Stress Paradigm

Published

Author(s)

Jason P. Campbell, Kin P. Cheung, John S. Suehle, A Oates

Abstract

A new and more accurate fast-IDVG measurement methodology is utilized to examine the transient degradation and recovery associated with the negative-bias temperature instability (NBTI). The results reveal that the anomalously large initial degradations reported in the recent literature are actually due to high-field stress acceleration and are not representative of low-field NBTI phenomena. Our observations at these higher fields reveal the presence of an, as yet unaccounted for, electron trapping/de-trapping component. The electron trapping is a signature of high-field stress degradation. While this high-field stress acceleration is unavoidable, care must be taken to account for this component in NBTI analysis. Collectively, our observations indicate that this high-field stress component is present and unaccounted for in a large portion of the recent NBTI literature.
Proceedings Title
International Conference on IC Design and Technology (ICICDT)
Conference Dates
May 18-20, 2009
Conference Location
Austin, TX

Keywords

NBTI, high-field stress, electron trapping

Citation

Campbell, J. , Cheung, K. , Suehle, J. and Oates, A. (2009), The Negative Bias Temperature Instability vs. High-Field Stress Paradigm, International Conference on IC Design and Technology (ICICDT), Austin, TX, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=902213 (Accessed October 2, 2025)

Issues

If you have any questions about this publication or are having problems accessing it, please contact [email protected].

Created May 18, 2009, Updated February 19, 2017
Was this page helpful?