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The Negative Bias Temperature Instability vs. High-Field Stress Paradigm

Published

Author(s)

Jason P. Campbell, Kin P. Cheung, John S. Suehle, A Oates

Abstract

A new and more accurate fast-IDVG measurement methodology is utilized to examine the transient degradation and recovery associated with the negative-bias temperature instability (NBTI). The results reveal that the anomalously large initial degradations reported in the recent literature are actually due to high-field stress acceleration and are not representative of low-field NBTI phenomena. Our observations at these higher fields reveal the presence of an, as yet unaccounted for, electron trapping/de-trapping component. The electron trapping is a signature of high-field stress degradation. While this high-field stress acceleration is unavoidable, care must be taken to account for this component in NBTI analysis. Collectively, our observations indicate that this high-field stress component is present and unaccounted for in a large portion of the recent NBTI literature.
Proceedings Title
International Conference on IC Design and Technology (ICICDT)
Conference Dates
May 18-20, 2009
Conference Location
Austin, TX

Keywords

NBTI, high-field stress, electron trapping

Citation

Campbell, J. , Cheung, K. , Suehle, J. and Oates, A. (2009), The Negative Bias Temperature Instability vs. High-Field Stress Paradigm, International Conference on IC Design and Technology (ICICDT), Austin, TX, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=902213 (Accessed April 16, 2024)
Created May 18, 2009, Updated February 19, 2017