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Near-field microwave microscope measurements to characterize bulk material properties



Atif A. Imtiaz, Thomas Baldwin, Hans T. Nembach, Thomas M. Wallis, Pavel Kabos


We measured bulk dielectric (Fused Silica), semiconductor (Silicon) and metal (Copper), with a Near-field Scanning Microwave Microscope (NSMM). We use three bulk materials to test the existing quasi-static theoretical approach to de-embed the materials properties of bulk materials. The known quasi-static models fit the data well with reasonale parameters for Silicon εs = 11.9, ς si = 50 S/m), and Fused Silicon εs = 4.44, tanδ = 1.3 x 10-4). However, for Copper, apart from quasi-static coupling with ςcu = 5.67x107 S/m), an additional resistive loss of 12 {Ω} originating from the Hertzian vertical-electric-dipole above homogenous conducting half-space is needed to fit the data. we also discuss the distinction of these bulk-materials upon the basis of the magnitude of their complex permittivity.
Applied Physics Letters


material properties, microwave microscopy, near-field antenna


Imtiaz, A. , Baldwin, T. , Nembach, H. , Wallis, T. and Kabos, P. (2007), Near-field microwave microscope measurements to characterize bulk material properties, Applied Physics Letters, [online], (Accessed May 20, 2024)


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Created June 12, 2007, Updated January 27, 2020