Near-field microwave microscope measurements to characterize bulk material properties

Published

June 12, 2007

Author(s)

Atif A. Imtiaz, Thomas Baldwin, Hans T. Nembach, Thomas M. Wallis, Pavel Kabos

Abstract

We measured bulk dielectric (Fused Silica), semiconductor (Silicon) and metal (Copper), with a Near-field Scanning Microwave Microscope (NSMM). We use three bulk materials to test the existing quasi-static theoretical approach to de-embed the materials properties of bulk materials. The known quasi-static models fit the data well with reasonale parameters for Silicon εs = 11.9, ς si = 50 S/m), and Fused Silicon εs = 4.44, tanδ = 1.3 x 10-4). However, for Copper, apart from quasi-static coupling with ςcu = 5.67x107 S/m), an additional resistive loss of 12 {Ω} originating from the Hertzian vertical-electric-dipole above homogenous conducting half-space is needed to fit the data. we also discuss the distinction of these bulk-materials upon the basis of the magnitude of their complex permittivity.

Citation

Applied Physics Letters

Volume

90

Pub Type

Journals

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Keywords

material properties, microwave microscopy, near-field antenna

Citation

Imtiaz, A. , Baldwin, T. , Nembach, H. , Wallis, T. and Kabos, P. (2007), Near-field microwave microscope measurements to characterize bulk material properties, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32646 (Accessed October 11, 2025)