NCT In-Situ Probes and the MBE Growth of Compound Semiconductors
Joseph G. Pellegrino, Jonathan E. Guyer, Donald A. Gajewski
Our research is centered on the use of in-situ measurement probes that monitor semiconductor growth. Our goal is to correlate material parameters observed during growth with device performance. A goal of this presentation is to develop collaborations that will help to develop a model of the thermal behavior of the substrate heater/wafer temperature during the molecular beam epitaxy (MBE) growth process. This model would significantly assist the development of next-generation temperature feedback controls on MBE and MOCVD deposition equipment. Better control of the substrate temperature will also lead to more optimized MBE growth of semiconductor heterostructures.
, Guyer, J.
and Gajewski, D.
NCT In-Situ Probes and the MBE Growth of Compound Semiconductors, NIST Interagency/Internal Report (NISTIR), National Institute of Standards and Technology, Gaithersburg, MD
(Accessed June 3, 2023)