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NCT In-Situ Probes and the MBE Growth of Compound Semiconductors

Published

Author(s)

Joseph G. Pellegrino, Jonathan E. Guyer, Donald A. Gajewski

Abstract

Our research is centered on the use of in-situ measurement probes that monitor semiconductor growth. Our goal is to correlate material parameters observed during growth with device performance. A goal of this presentation is to develop collaborations that will help to develop a model of the thermal behavior of the substrate heater/wafer temperature during the molecular beam epitaxy (MBE) growth process. This model would significantly assist the development of next-generation temperature feedback controls on MBE and MOCVD deposition equipment. Better control of the substrate temperature will also lead to more optimized MBE growth of semiconductor heterostructures.
Citation
NIST Interagency/Internal Report (NISTIR) -

Keywords

in-situ measurement probes, semiconductors, substrate, moleculr beam epitaxy, MBE

Citation

Pellegrino, J. , Guyer, J. and Gajewski, D. (2000), NCT In-Situ Probes and the MBE Growth of Compound Semiconductors, NIST Interagency/Internal Report (NISTIR), National Institute of Standards and Technology, Gaithersburg, MD (Accessed February 26, 2024)
Created October 10, 2000, Updated October 12, 2021