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NBTI: Why Won't This Thing Go Away?

Published

Author(s)

Jason P. Campbell

Abstract

The negative-bias temperature instability (NBTI) is a reliability problem that, in the last ten years, has risen from relative obscurity to become the most important reliability problem in advanced pMOSFET devices. Even though a significant effort has been spent trying to eliminate NBTI signatures (negative threshold voltage shift and transconductance degradation after inversion gate stress at elevated temperatures), the issue still persists. NBTI s elusiveness is due, at least in part, to the fact that NBTI-induced degradation relaxes very quickly after the conclusion of stress. This makes NBTI characterizations quite tedious and clouds the fundamental understanding of the degradation/relaxation mechanism.

Citation

Campbell, J. (2009), NBTI: Why Won't This Thing Go Away? (Accessed March 1, 2024)
Created October 19, 2009, Updated February 19, 2017