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MoxSi1-x a versatile material for nanowire to microwire single-photon detectors from UV to near IR
Published
Author(s)
Adriana Lita, Varun Verma, Jeff Chiles, Richard Mirin, Sae Woo Nam
Abstract
We investigate material properties in MoxSi1-x thin films with the goal of optimization for single-photon detection from UV to mid-IR wavelengths. Saturated internal detection efficiency appears to be related to film structure for this material. By reducing the film thickness in the optimized material, we demonstrate saturated internal detection efficiency at 1550 nm wavelength for micron-wide meander shaped single-photon detectors with wire widths up to 2.0 microns and active areas up to 362 x 362 micrometer2.
Lita, A.
, Verma, V.
, Chiles, J.
, Mirin, R.
and Nam, S.
(2021),
MoxSi1-x a versatile material for nanowire to microwire single-photon detectors from UV to near IR, Superconductor Science & Technology, [online], https://doi.org/10.1088/1361-6668/abeb00, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=931566
(Accessed October 8, 2025)