Modeling the effects of acid amplifiers on photoresist stochastics
Gregg M. Gallatin, Patrick Naulleau, Robert Brainard
The tradeoff between Resolution, Line Edge Roughness (LER) and Sensitivity, the so called RLS tradeoff, continues to be a difficult challenge, especially for EUV lithography. Acid amplifiers have recently been proposed as a method to improve upon the overall RLS performance of EUV resists. Here we discuss a simulation approach to study the issue. The model extends the standard reaction diffusion equation to explicitly capture the stochastic behavior of exposure, photo-acid generation and acid amplification. Using this model the impact acid amplifiers have on the RLS tradeoff is studied under a variety of resist conditions.
Proceedings of SPIE
February 13-17, 2012
San Jose, CA
Materials and Processes for Advanced Lithography and Nanotechnology
, Naulleau, P.
and Brainard, R.
Modeling the effects of acid amplifiers on photoresist stochastics, Proceedings of SPIE, San Jose, CA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=910777
(Accessed September 22, 2023)