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Modeling the effects of acid amplifiers on photoresist stochastics

Published

Author(s)

Gregg M. Gallatin, Patrick Naulleau, Robert Brainard

Abstract

The tradeoff between Resolution, Line Edge Roughness (LER) and Sensitivity, the so called RLS tradeoff, continues to be a difficult challenge, especially for EUV lithography. Acid amplifiers have recently been proposed as a method to improve upon the overall RLS performance of EUV resists. Here we discuss a simulation approach to study the issue. The model extends the standard reaction diffusion equation to explicitly capture the stochastic behavior of exposure, photo-acid generation and acid amplification. Using this model the impact acid amplifiers have on the RLS tradeoff is studied under a variety of resist conditions.
Proceedings Title
Proceedings of SPIE
Volume
8322
Conference Dates
February 13-17, 2012
Conference Location
San Jose, CA
Conference Title
Materials and Processes for Advanced Lithography and Nanotechnology

Keywords

Lithography, Photoresist, Line Edge Roughness, Acid Amplfiers

Citation

Gallatin, G. , Naulleau, P. and Brainard, R. (2012), Modeling the effects of acid amplifiers on photoresist stochastics, Proceedings of SPIE, San Jose, CA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=910777 (Accessed July 21, 2024)

Issues

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Created March 23, 2012, Updated June 2, 2021