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Microwave Properties of Acceptor-Doped Barium Strontium Titanate Thin Films for Tunable Electronic Devices

Published

Author(s)

Richard G. Geyer, Melanie W. Cole

Abstract

The influence of Mg doping on the structure, microstructure, surface morphological and dielectric properties of Ba1-xSrxTiO3 (BST) thin films has been measured and analyzed. The films were fabricated on MgO substrates with the metalorganic solution deposition technique using carboxylate-alkoxide precursors and annealed at 800 oC in an oxygen atmosphere. The structure, microstructure, surface morphology and film/substrate compositional quality were evaluated with glancing angle x-ray diffraction, field emission scanning microscopy, atomic force microscopy, and Auger electron spectroscopy studies. Dielectric properties of unpatterned films were measured at 10 GHz using a coupled and tuned split dielectric resonator system. The Mg-doped BST films exhibited improved dielectric and properties compared to undoped Ba0.6Sr0.4TiO3 thin filmsand are candidates for integration into tunable devices.
Citation
Microwave Properties of Acceptor-Doped Barium Strontium Titanate Thin Films for Tunable Electronic Devices
Publisher Info
The American Ceramic Society, Westerville, OH

Citation

Geyer, R. and Cole, M. (2003), Microwave Properties of Acceptor-Doped Barium Strontium Titanate Thin Films for Tunable Electronic Devices, The American Ceramic Society, Westerville, OH (Accessed June 9, 2023)
Created December 31, 2002, Updated October 12, 2021