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Microwave Characterization of Semiconductors with a Split-Cylinder Cavity

Published

Author(s)

Billy F. Riddle, James R. Baker-Jarvis, Michael D. Janezic

Abstract

In this paper we demonstrate the use of a split-cylinder cavity for characterizing semiconductors over a temperature range of 173 K (-100oC) to 373 K (+100oC) at microwave frequencies (9-30 GHz). Complex permittivity measurements of silicon (Si) and gallium arsenide (GaAs) wafers are presented in order to evaluate the cavity's performance with this type of material.
Citation
IEEE Journal of Quantum Electronics
Volume
19

Keywords

computer permittivity, split-cyclinder cavity, semiconductors

Citation

Riddle, B. , Baker-Jarvis, J. and Janezic, M. (2008), Microwave Characterization of Semiconductors with a Split-Cylinder Cavity, IEEE Journal of Quantum Electronics (Accessed April 20, 2024)
Created July 31, 2008, Updated October 12, 2021