Riddle, B.
, Baker-Jarvis, J.
and Janezic, M.
(2008),
Microwave Characterization of Semiconductors with a Split-Cylinder Cavity, IEEE Journal of Quantum Electronics
(Accessed June 24, 2025)
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Microwave Characterization of Semiconductors with a Split-Cylinder Cavity
Published
Author(s)
, ,
Abstract
In this paper we demonstrate the use of a split-cylinder cavity for characterizing semiconductors over a temperature range of 173 K (-100oC) to 373 K (+100oC) at microwave frequencies (9-30 GHz). Complex permittivity measurements of silicon (Si) and gallium arsenide (GaAs) wafers are presented in order to evaluate the cavity's performance with this type of material.Citation
IEEE Journal of Quantum Electronics
Volume
19
Pub Type
Journals
Keywords
computer permittivity, split-cyclinder cavity, semiconductors
Citation
Issues
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Created July 31, 2008, Updated October 12, 2021