David T. Read, Yi-Wen Cheng, Joseph D. McColskey, R R. Keller
Here we report the results of tensile tests of thin films of Al-0.5 % Cu deposited on bare silicon. This material was on a wafer that was subjected to the complete CMOS fabrication process, tensile strength, and elongation were all lower than the corresponding values found previously for pure electron-beam-evaporated aluminum films. The strengths and elongation decreased slightly as the specimen temperature was raised from 25 to 150 'C. The slopes of the stress-straincurves from unloading-reloading runs were lower than the handbook Young's modulus of aluminum. The results are interpreted with the help of scanning and transmission electron microscopy.
Thin Films: Stresses and Mechanical Properties, Symposium FF | | Thin Films: Stresses and Mechanical Properties IX | Materials Research Society
November 26-30, 2001
Materials Research Society Symposium Proceedings
CMOS, ductility, elongation, grain size, strain, strength, stress, thin film
, Cheng, Y.
, McColskey, J.
and Keller, R.
Mechanical Behavior of Contact Aluminum Alloy, Thin Films: Stresses and Mechanical Properties, Symposium FF | | Thin Films: Stresses and Mechanical Properties IX | Materials Research Society
(Accessed October 1, 2023)