Measurements for the Reliability and Electrical Characterization of Semiconductor Nanowires

Published

April 30, 2008

Author(s)

Curt A. Richter, Hao Xiong, Xiaoxiao Zhu, Wenyong Wang, Vincent M. Stanford, Qiliang Li, D. E. Ioannou, Woong-Ki Hong, Takhee Lee

Abstract

Nanoelectronic devices based upon self-assembled semiconductor nanowires are excellent research tools for investigating the behavior of structures with sub-lithographic features as well as a promising basis for future information processing technologies.  We describe two unique approaches to successfully fabricate nanowire devices, one based upon harvesting and positioning nanowires, and one based upon the direct growth of nanowires in predefined locations.  Test structures are fabricated and electronically characterized to probe the fundamental properties of chemical-vapor-deposition grown silicon nanowires.  Important information about current transport and fluctuations in materials and devices can be derived from noise measurements, and low frequency 1/f noise has traditionally been utilized as a quality and reliability indicator for semiconductor devices.  Both low frequency 1/f noise and random telegraph signals are shown here to be powerful methods for probing trapping defects in nanoelectronic devices.

Proceedings Title

Proceedings of the 46th Annual IEEE Reliability Physics Symposium 2008

Conference Dates

April 27-30, 2008

Conference Location

Phoenix, AZ

Conference Title

International Reliability Physics Symposium

Pub Type

Conferences

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Keywords

nanoelectronics, semiconductor nanowires, 1/f noise, test structures

Citation

Richter, C. , Xiong, H. , Zhu, X. , Wang, W. , Stanford, V. , Li, Q. , Ioannou, D. , Hong, W. and Lee, T. (2008), Measurements for the Reliability and Electrical Characterization of Semiconductor Nanowires, Proceedings of the 46th Annual IEEE Reliability Physics Symposium 2008, Phoenix, AZ, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32971 (Accessed October 9, 2025)