Materials Characterization With Multiple Offset Reflects at Frequencies to 110 GHz
Nina P. Basta, Aaron Hagerstrom, Jasper A. Drisko, Jim Booth, Edward Garboczi, Chris Long, Nate Orloff
Understanding the electrical properties of materials is a necessary part of any microwave circuit design. In this article, we explore the possibility of employing multiple-offset-reflect devices for on-wafer materials characterization at frequencies up to 110 GHz. The objective of this new technique is to provide a one-port characterization technique that does not require a first-tier calibration. To verify our results, we performed companion analyses with multiline thru-reflect-line, extracting the permittivity of fused silica and SU-8, which is a common photocurable polymer. For fused silica, we obtained a relative permittivity of 3.80 ± 0.02 from 5 to 110 GHz. For SU-8, we obtained a relative permittivity of 3.25 ± 0.02 at 28 GHz, which agreed with the literature values.
IEEE Transactions on Microwave Theory and Techniques
, Hagerstrom, A.
, Drisko, J.
, Booth, J.
, Garboczi, E.
, Long, C.
and Orloff, N.
Materials Characterization With Multiple Offset Reflects at Frequencies to 110 GHz, IEEE Transactions on Microwave Theory and Techniques, [online], https://doi.org/10.1109/TMTT.2019.2950023
(Accessed November 30, 2023)