Low frequency noise properties of quantum tunneling Sb-heterostructure millimeter wave diodes
Arttu Luukanen, Erich N. Grossman
Sb-heterostructure quantum tunneling diodes, fabricated from epitaxial layers of InAs and AIGaSb, are a recently proposed device for RF direct detection and mixing in the submillimeter wavelength range. These diodes exhibit especially high nonlinearity in the current-voltage characteristic that produces the rectification or mixing without bias. This is a highly desirable feature as the device does not suffer from large 1/f noise, a major shortcoming in other devices such as Schottky-barrier diodes or resistive room-temperature bolometers. In this paper, we present the noise characteristics of the diode as a function of the bias voltage. At room temperature and zero bias, the device demonstrates a Johnson noise limited matched noise equivalent power of 1 pW/rtHz.
and Grossman, E.
Low frequency noise properties of quantum tunneling Sb-heterostructure millimeter wave diodes, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=31912
(Accessed December 7, 2023)