Low frequency noise properties of quantum tunneling Sb-heterostructure millimeter wave diodes

Published

June 30, 2005

Author(s)

Arttu Luukanen, Erich N. Grossman

Abstract

Sb-heterostructure quantum tunneling diodes, fabricated from epitaxial layers of InAs and AIGaSb, are a recently proposed device for RF direct detection and mixing in the submillimeter wavelength range. These diodes exhibit especially high nonlinearity in the current-voltage characteristic that produces the rectification or mixing without bias. This is a highly desirable feature as the device does not suffer from large 1/f noise, a major shortcoming in other devices such as Schottky-barrier diodes or resistive room-temperature bolometers. In this paper, we present the noise characteristics of the diode as a function of the bias voltage. At room temperature and zero bias, the device demonstrates a Johnson noise limited matched noise equivalent power of 1 pW/rtHz.

Citation

Applied Physics Letters

Volume

772

Issue

1

Pub Type

Journals

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Keywords

backward diodes, millimeter wave diodes, noise

Citation

Luukanen, A. and Grossman, E. (2005), Low frequency noise properties of quantum tunneling Sb-heterostructure millimeter wave diodes, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=31912 (Accessed October 25, 2025)