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Large Random Telegraph Noise in Sub-Threshold Operation of Nano-Scale nMOSFETs

Published

Author(s)

Jason P. Campbell, Liangchun (. Yu, Kin P. Cheung, Jin Qin, John S. Suehle, A Oates, Kuang Sheng

Abstract

We utilize low-frequency noise measurements to examine the sub-threshold voltage (sub-VTH) operation of highly scaled devices. We find that the sub-VTH low-frequency noise is dominated by random telegraph noise (RTN). The RTN is exacerbated both by channel dimension scaling and reducing the gate overdrive into the sub-VTH regime. These large RTN fluctuations greatly impact circuit variability and represent a troubling obstacle that must be solved if sub-VTH operation is to become a viable solution for low-power applications.
Proceedings Title
International Conference on IC Design and Technology (ICICDT)
Conference Dates
May 18-20, 2009
Conference Location
Austin, TX

Keywords

RTN, Sub-VTH operation

Citation

Campbell, J. , Yu, L. , Cheung, K. , Qin, J. , Suehle, J. , Oates, A. and Sheng, K. (2009), Large Random Telegraph Noise in Sub-Threshold Operation of Nano-Scale nMOSFETs, International Conference on IC Design and Technology (ICICDT), Austin, TX, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=902184 (Accessed June 17, 2024)

Issues

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Created May 18, 2009, Updated February 19, 2017