Campbell, J.
, Yu, L.
, Cheung, K.
, Qin, J.
, Suehle, J.
, Oates, A.
and Sheng, K.
(2009),
Large Random Telegraph Noise in Sub-Threshold Operation of Nano-Scale nMOSFETs, International Conference on IC Design and Technology (ICICDT), Austin, TX, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=902184
(Accessed October 7, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Large Random Telegraph Noise in Sub-Threshold Operation of Nano-Scale nMOSFETs
Published
Author(s)
, , , , , A Oates, Kuang Sheng
Abstract
We utilize low-frequency noise measurements to examine the sub-threshold voltage (sub-VTH) operation of highly scaled devices. We find that the sub-VTH low-frequency noise is dominated by random telegraph noise (RTN). The RTN is exacerbated both by channel dimension scaling and reducing the gate overdrive into the sub-VTH regime. These large RTN fluctuations greatly impact circuit variability and represent a troubling obstacle that must be solved if sub-VTH operation is to become a viable solution for low-power applications.Proceedings Title
International Conference on IC Design and Technology (ICICDT)
Conference Dates
May 18-20, 2009
Conference Location
Austin, TX
Pub Type
Conferences
Download Paper
Keywords
RTN, Sub-VTH operation
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created May 18, 2009, Updated February 19, 2017