IR Spectroscopic Characterization of the Buried Metal Interface of Metal-Molecule-Silicon Vertical Diodes

Published

September 28, 2005

Author(s)

Christina Hacker, Curt A. Richter, Lee J. Richter

Abstract

We have developed and utilized p-polarized backside reflection absorption infrared spectroscopy (pb-RAIRS) to examine dielectrics between silicon substrates and metallic overlayers. The technique has been used to investigate oxides, organic layers on oxides, and organic layers directly attached to silicon under Au, Al and Ti. Simultaneous electrical test structures were prepared using a capacitor mask. Little interaction of the metal with oxides was observed in contrast to the observed interaction of the metal with the organic monolayers. The vibrational data was correlated with the electrical data to establish a cohesive understanding of the buried interface.

Conference Dates

March 14-18, 2005

Conference Location

Richardson, TX, USA

Conference Title

Characterization and Metrology for ULSI Technology

Pub Type

Conferences

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Keywords

infrared spectroscopy, organic monolayer, metal interface, silicon, oxide, RAIRS

Citation

Hacker, C. , Richter, C. and Richter, L. (2005), IR Spectroscopic Characterization of the Buried Metal Interface of Metal-Molecule-Silicon Vertical Diodes, Characterization and Metrology for ULSI Technology, Richardson, TX, USA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=31935 (Accessed December 5, 2024)