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Investigation of the Threshold Voltage of MOSFETs with Position- and Potential- Dependent Interface Trap Distributions Using a Fixed-Point Iteration Method

Published

Author(s)

Michael Gaitan, I. D. Mayergoyz, C. E. Korman
Citation
IEEE Transactions on Electron Devices

Citation

Gaitan, M. , Mayergoyz, I. and Korman, C. (1990), Investigation of the Threshold Voltage of MOSFETs with Position- and Potential- Dependent Interface Trap Distributions Using a Fixed-Point Iteration Method, IEEE Transactions on Electron Devices (Accessed May 30, 2024)

Issues

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Created April 29, 1990, Updated October 12, 2021