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Intra-grain local luminescence properties of CdSe0.1Te0.9 Thin Films

Published

Author(s)

Ganga Neupane, Behrang Hamadani, David Albin, Joel Duenow, Matthew Reese, Susanna Thon

Abstract

We report on the local photoluminescence properties of grains and grain boundaries of CdSe0.1Te0.9 thin film deposited by the colossal grain growth method using a wide-field hyperspectral imaging technique. We observed significant variations in the photoluminescence intensity of both individual grains and also that of grain boundaries. Multiple sub-bandgap defect peaks were captured in the luminescence spectra in the energy range 1.2 eV to 1.6 eV. The intensity and peak positions of these sub-gap emissions were slightly different among various grains and at the grain boundaries, revealing intra- and inter-grain variations in these polycrystalline thin films. A recently-developed density-of-states based photoluminescence model was extended to include multiple peaks and was fitted to the data. We observed that at a fixed temperature, the quasi-Fermi level splitting energy and a disordered energy parameter can be extracted locally by use of this model.
Proceedings Title
IEEE Photovoltaic Specialists Conference (PVSC)
Conference Dates
June 11-16, 2023
Conference Location
San Juan, PR, US
Conference Title
50th IEEE PVSC

Citation

Neupane, G. , Hamadani, B. , Albin, D. , Duenow, J. , Reese, M. and Thon, S. (2023), Intra-grain local luminescence properties of CdSe0.1Te0.9 Thin Films, IEEE Photovoltaic Specialists Conference (PVSC), San Juan, PR, US, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=936770 (Accessed June 24, 2024)

Issues

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Created December 25, 2023, Updated January 2, 2024