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Internal quantum efficiency modeling of silicon photodiodes



Thomas R. Gentile, Steven W. Brown, Keith R. Lykke, Ping-Shine Shaw, John T. Woodward IV


Results are presented for modeling of the internal quantum efficiency (IQE) of silicon photodiodes in the 400 nm to 900 nm wavelength range. The IQE data are based on measurements of the external quantum efficiencies of three transmission trap detectors using an extensive set of laser wavelengths, along with the transmittance of the traps. We find that a simplified version of a previously reported IQE model fits the data with an accuracy of better than 0.01 %
Applied Optics


optical metrology, radiometry, responsivity, silicon, trap detector


, T. , Brown, S. , Lykke, K. , Shaw, P. and Woodward, J. (2010), Internal quantum efficiency modeling of silicon photodiodes, Applied Optics, [online], (Accessed July 15, 2024)


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Created April 1, 2010, Updated February 19, 2017