Interface Intermixing and In-Plane Grain Size in Aluminum-Transition Metal Bilayers
J D. Buchanan, T P. Hase, B K. Tanner, Cedric J. Powell, William F. Egelhoff Jr.
The correlation between grain size and intermixing in sputter deposited bilayers of the form X/Al and Al/X has been investigated by in-plane grazing incidence x-ray diffraction. We find a strong correlation between grain size and intermixing at the interface and attribute the majority of intermixing to diffusion along grain boundaries. Depositing aluminium on the Si / SiO2 substrate results in a crystalline structure with very small grain size that promotes a high level of such intermixing. The substantial asymmetry in the amount of interface intermixing observed previously between growth of Al on X and of X on Al is explained by the small grain size of the Al in the latter case.
, Hase, T.
, Tanner, B.
, Powell, C.
and Egelhoff Jr., W.
Interface Intermixing and In-Plane Grain Size in Aluminum-Transition Metal Bilayers, Journal of Applied Physics
(Accessed December 1, 2023)