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Interface Intermixing and In-Plane Grain Size in Aluminum-Transition Metal Bilayers

Published

Author(s)

J D. Buchanan, T P. Hase, B K. Tanner, Cedric J. Powell, William F. Egelhoff Jr.

Abstract

The correlation between grain size and intermixing in sputter deposited bilayers of the form X/Al and Al/X has been investigated by in-plane grazing incidence x-ray diffraction. We find a strong correlation between grain size and intermixing at the interface and attribute the majority of intermixing to diffusion along grain boundaries. Depositing aluminium on the Si / SiO2 substrate results in a crystalline structure with very small grain size that promotes a high level of such intermixing. The substantial asymmetry in the amount of interface intermixing observed previously between growth of Al on X and of X on Al is explained by the small grain size of the Al in the latter case.
Citation
Journal of Applied Physics
Volume
96
Issue
No. 12

Keywords

aluminum, bilayers iridium, osmium, transition metals

Citation

Buchanan, J. , Hase, T. , Tanner, B. , Powell, C. and Egelhoff Jr., W. (2004), Interface Intermixing and In-Plane Grain Size in Aluminum-Transition Metal Bilayers, Journal of Applied Physics (Accessed June 19, 2024)

Issues

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Created November 30, 2004, Updated October 12, 2021