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The Interaction of Stoichiometry, Mechanical Stress and Interface Trap Density in LPCVD Si-Rich SiNx-Si Structures

Published

Author(s)

S C. Witczak, Michael Gaitan, John S. Suehle, M. C. Peckerar, M T. Ma
Citation
Solid-State Electronics
Volume
37
Issue
10

Citation

Witczak, S. , Gaitan, M. , Suehle, J. , Peckerar, M. and Ma, M. (1994), The Interaction of Stoichiometry, Mechanical Stress and Interface Trap Density in LPCVD Si-Rich SiNx-Si Structures, Solid-State Electronics (Accessed October 7, 2024)

Issues

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Created December 30, 1994, Updated October 12, 2021