Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

The Interaction of Stoichiometry, Mechanical Stress and Interface Trap Density in LPCVD Si-Rich SiNx-Si Structures

Published

Author(s)

S C. Witczak, Michael Gaitan, John S. Suehle, M. C. Peckerar, M T. Ma
Citation
Solid-State Electronics
Volume
37
Issue
10

Citation

Witczak, S. , Gaitan, M. , Suehle, J. , Peckerar, M. and Ma, M. (1994), The Interaction of Stoichiometry, Mechanical Stress and Interface Trap Density in LPCVD Si-Rich SiNx-Si Structures, Solid-State Electronics (Accessed May 22, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created December 30, 1994, Updated October 12, 2021