Witczak, S.
, Gaitan, M.
, Suehle, J.
, Peckerar, M.
and Ma, M.
(1994),
The Interaction of Stoichiometry, Mechanical Stress and Interface Trap Density in LPCVD Si-Rich SiNx-Si Structures, Solid-State Electronics
(Accessed December 15, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
The Interaction of Stoichiometry, Mechanical Stress and Interface Trap Density in LPCVD Si-Rich SiNx-Si Structures
Published
Author(s)
S C. Witczak, , , M. C. Peckerar, M T. Ma
Citation
Solid-State Electronics
Volume
37
Issue
10
Pub Type
Journals
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created December 30, 1994, Updated October 12, 2021