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Initial Etching of GaAs (001) During H2 Plasma Cleaning



Steven W. Robey, K Sinniah


The initial etching of GaAs(001) during remote H2 plasma etching for oxide removal was examined using Atomic Force Microscopy (AFM), coupled with in situ Reflection High Energy Diffraction (RHEED) and Auger spectroscopy. Localized etching of the GaAs surface to form etch pits 5 nm to 10 nm and 20 nm to 50 nm in diameter occurs for etch temperatures below {difference} 650K. Etch pit formation was found to occur well before complete oxide removal. The development of etch pits is significantly influenced by surface mis-cut steps. This effect is suggested top be associated with the hydrogen incorporation in the near-surface in the vicinity of surface defects such as steps.
Journal of Applied Physics
No. 5


AFM, etch, GaAs, hydrogen, plasma


Robey, S. and Sinniah, K. (2000), Initial Etching of GaAs (001) During H<sub>2</sub> Plasma Cleaning, Journal of Applied Physics (Accessed May 28, 2024)


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Created September 1, 2000, Updated February 17, 2017