Influence of source-drain electric field on mobility and charge transport in organic field-effect transistors

Published

August 21, 2007

Author(s)

Behrang Hamadani, R J. Kline, Iain McCulloch, Martin Heeney, Curt A. Richter, David J. Gundlach

Abstract

We report on a strong field-dependent mobility in OFETs fabricated by using poly(2,5-bis(3-alkylthiophene-2-yl)thieno[3,2-b]thiophene) (pBTTT-C14) as the active polymer layer. Charge transport and mobilities in devices annealed in the mesophase show a more pronounced dependence on channel length as compared with as-cast devices. First, we show that the contact effects in both sets of devices are negligible from room temperature down to 100 K. Then we show that this field-dependence is consistent with a Poole-Frenkel model of mobility. Finally, the nonlinear transport data for short channel devices is modeled consistently in the Poole-Frenkel framework, over a broad temperature range.

Citation

Journal of Applied Physics

Volume

102

Pub Type

Journals

Keywords

charge transport, organic field-effect transistors, organic semiconductor, Poole-Frenkel effect, TFT

Citation

Hamadani, B. , Kline, R. , McCulloch, I. , Heeney, M. , Richter, C. and Gundlach, D. (2007), Influence of source-drain electric field on mobility and charge transport in organic field-effect transistors, Journal of Applied Physics (Accessed October 28, 2025)