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Influence of source-drain electric field on mobility and charge transport in organic field-effect transistors
Published
Author(s)
Behrang Hamadani, R J. Kline, Iain McCulloch, Martin Heeney, Curt A. Richter, David J. Gundlach
Abstract
We report on a strong field-dependent mobility in OFETs fabricated by using poly(2,5-bis(3-alkylthiophene-2-yl)thieno[3,2-b]thiophene) (pBTTT-C14) as the active polymer layer. Charge transport and mobilities in devices annealed in the mesophase show a more pronounced dependence on channel length as compared with as-cast devices. First, we show that the contact effects in both sets of devices are negligible from room temperature down to 100 K. Then we show that this field-dependence is consistent with a Poole-Frenkel model of mobility. Finally, the nonlinear transport data for short channel devices is modeled consistently in the Poole-Frenkel framework, over a broad temperature range.
Hamadani, B.
, Kline, R.
, McCulloch, I.
, Heeney, M.
, Richter, C.
and Gundlach, D.
(2007),
Influence of source-drain electric field on mobility and charge transport in organic field-effect transistors, Journal of Applied Physics
(Accessed October 9, 2025)