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Indium Bump Process for Low-Temperature Detectors and Readout

Published

Author(s)

Tammy Lucas, John Biesecker, W.Bertrand (Randy) Doriese, Shannon Duff, Gene C. Hilton, Joel Ullom, Michael Vissers, Dan Schmidt

Abstract

We describe our indium bump process for low-temperature detectors and associated readout. A titanium nitride under bump metallization layer (UBM) is reactively sputtered onto wiring pads as a diffusion barrier and adhesion layer. Indium is thermally evaporated onto this titanium nitride at the desired thickness for bump bonding. Patterning for both titanium nitride and indium layers is accomplished by liftoff techniques. The process flow is compatible with many processes utilized by the low-temperature detector community.
Citation
The proceedings of LTD-19 will be published as a Special Issue of the Journal of Low Temperature Physics
Volume
209

Keywords

hybridization, indium bumps, die bonding

Citation

Lucas, T. , Biesecker, J. , Doriese, W. , Duff, S. , Hilton, G. , Ullom, J. , Vissers, M. and Schmidt, D. (2022), Indium Bump Process for Low-Temperature Detectors and Readout, The proceedings of LTD-19 will be published as a Special Issue of the Journal of Low Temperature Physics, [online], https://doi.org/10.1007/s10909-022-02728-6, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=933425 (Accessed April 21, 2024)
Created May 20, 2022, Updated January 26, 2023