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Impact of the Trapping of Anode Hot Holes on Silicon Dioxide Breakdown



Eric M. Vogel, Da-Wei Heh, J B. Bernstein


Hot holes are injected from the anode and trapped in thin silicon dioxide using constant voltage stress at large gate voltage. By comparing oxides having trapped holes with oxides in which the holes were detrapped, it is shown that the presence of trapped holes does not affect the breakdown of the oxide. Furthermore, as the temperature during stress is increased, less hole trapping is observed whereas the charge-to-breakdown of the oxide is decreased. The results show that although the trapping of hot holes injected using anode hole injection may be partly responsible for defect generation in silicon dioxide, breakdown can not be limited by hole trapping.
IEEE Electron Device Letters


breakdown, holes, MOS, oxide, reliability, traps


Vogel, E. , Heh, D. and Bernstein, J. (2002), Impact of the Trapping of Anode Hot Holes on Silicon Dioxide Breakdown, IEEE Electron Device Letters (Accessed June 18, 2024)


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Created October 31, 2002, Updated October 12, 2021