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Impact of the Trapping of Anode Hot Holes on Silicon Dioxide Breakdown

Published

Author(s)

Eric M. Vogel, Da-Wei Heh, J B. Bernstein

Abstract

Hot holes are injected from the anode and trapped in thin silicon dioxide using constant voltage stress at large gate voltage. By comparing oxides having trapped holes with oxides in which the holes were detrapped, it is shown that the presence of trapped holes does not affect the breakdown of the oxide. Furthermore, as the temperature during stress is increased, less hole trapping is observed whereas the charge-to-breakdown of the oxide is decreased. The results show that although the trapping of hot holes injected using anode hole injection may be partly responsible for defect generation in silicon dioxide, breakdown can not be limited by hole trapping.
Citation
IEEE Electron Device Letters
Volume
23
Issue
11

Keywords

breakdown, holes, MOS, oxide, reliability, traps

Citation

Vogel, E. , Heh, D. and Bernstein, J. (2002), Impact of the Trapping of Anode Hot Holes on Silicon Dioxide Breakdown, IEEE Electron Device Letters (Accessed February 29, 2024)
Created October 31, 2002, Updated October 12, 2021