Vogel, E.
, Heh, D.
and Bernstein, J.
(2002),
Impact of the Trapping of Anode Hot Holes on Silicon Dioxide Breakdown, IEEE Electron Device Letters
(Accessed October 12, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Impact of the Trapping of Anode Hot Holes on Silicon Dioxide Breakdown
Published
Author(s)
, , J B. Bernstein
Abstract
Hot holes are injected from the anode and trapped in thin silicon dioxide using constant voltage stress at large gate voltage. By comparing oxides having trapped holes with oxides in which the holes were detrapped, it is shown that the presence of trapped holes does not affect the breakdown of the oxide. Furthermore, as the temperature during stress is increased, less hole trapping is observed whereas the charge-to-breakdown of the oxide is decreased. The results show that although the trapping of hot holes injected using anode hole injection may be partly responsible for defect generation in silicon dioxide, breakdown can not be limited by hole trapping.Citation
IEEE Electron Device Letters
Volume
23
Issue
11
Pub Type
Journals
Keywords
breakdown, holes, MOS, oxide, reliability, traps
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created October 31, 2002, Updated October 12, 2021