Impact of Substrate Hot Hole Injection on Ultra-thin Silicon Dioxide Breakdown
Da-Wei Heh, Eric M. Vogel, J B. Bernstein
The impact of hot holes on gate oxide breakdown is studied by investigating devices under constant voltage stress with different amount of pre-injected substrate hot holes. The results show that oxide breakdown is independent of the amount of those pre-injected hot holes, which suggests that defects generated by hot holes are not directly related to oxide breakdown during constant voltage stress conditions.
Applied Physics Letters
, Vogel, E.
and Bernstein, J.
Impact of Substrate Hot Hole Injection on Ultra-thin Silicon Dioxide Breakdown, Applied Physics Letters
(Accessed February 21, 2024)