NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.

Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.

U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

PUBLICATIONS

Impact of Substrate Hot Hole Injection on Ultra-thin Silicon Dioxide Breakdown

Published

Author(s)

Da-Wei Heh, Eric M. Vogel, J B. Bernstein

Abstract

The impact of hot holes on gate oxide breakdown is studied by investigating devices under constant voltage stress with different amount of pre-injected substrate hot holes. The results show that oxide breakdown is independent of the amount of those pre-injected hot holes, which suggests that defects generated by hot holes are not directly related to oxide breakdown during constant voltage stress conditions.
Citation
Applied Physics Letters
Volume
82
Issue
19
Pub Type
Journals

Citation

Heh, D. , Vogel, E. and Bernstein, J. (2003), Impact of Substrate Hot Hole Injection on Ultra-thin Silicon Dioxide Breakdown, Applied Physics Letters (Accessed October 14, 2025)

Issues

If you have any questions about this publication or are having problems accessing it, please contact [email protected].

Created May 11, 2003, Updated October 12, 2021
Was this page helpful?