Heh, D.
, Vogel, E.
and Bernstein, J.
(2003),
Impact of Substrate Hot Hole Injection on Ultra-thin Silicon Dioxide Breakdown, Applied Physics Letters
(Accessed July 9, 2025)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Impact of Substrate Hot Hole Injection on Ultra-thin Silicon Dioxide Breakdown
Published
Author(s)
, , J B. Bernstein
Abstract
The impact of hot holes on gate oxide breakdown is studied by investigating devices under constant voltage stress with different amount of pre-injected substrate hot holes. The results show that oxide breakdown is independent of the amount of those pre-injected hot holes, which suggests that defects generated by hot holes are not directly related to oxide breakdown during constant voltage stress conditions.Citation
Applied Physics Letters
Volume
82
Issue
19
Pub Type
Journals
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact [email protected].
Created May 11, 2003, Updated October 12, 2021