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Impact of Substrate Hot Hole Injection on Ultra-thin Silicon Dioxide Breakdown

Published

Author(s)

Da-Wei Heh, Eric M. Vogel, J B. Bernstein

Abstract

The impact of hot holes on gate oxide breakdown is studied by investigating devices under constant voltage stress with different amount of pre-injected substrate hot holes. The results show that oxide breakdown is independent of the amount of those pre-injected hot holes, which suggests that defects generated by hot holes are not directly related to oxide breakdown during constant voltage stress conditions.
Citation
Applied Physics Letters
Volume
82
Issue
19

Citation

Heh, D. , Vogel, E. and Bernstein, J. (2003), Impact of Substrate Hot Hole Injection on Ultra-thin Silicon Dioxide Breakdown, Applied Physics Letters (Accessed February 21, 2024)
Created May 11, 2003, Updated October 12, 2021