Identification of a strongly nonlinear device compact model based on vectorial large signal measurements

Published

May 11, 2005

Author(s)

M Camprini, Alessandro Cidronali, I. Magrini, Giovanni Loglio, G. Collodi, Jeffrey Jargon, Gianfranco Manes

Abstract

This paper deals with the identification of equivalent circuit models for strongly nonlinear devices by taking advantage of the so-called "Vectorial Large-Signal Measurements.: A very specific device, the Heterojunction Interband Tunneling FET (HITFET), has been selected as case of study for its peculiar nonlinear behavior. A comprehensive description of the identification is given along with a number of experimental results. In particular, the comparison between simulated and measured data for different power levels and frequencies fromt he set adopted during the identification confirms the extrapolation capability of the approach.

Proceedings Title

The European Gallium Arsenide and Other Compound Semiconductors Application Symposium

Conference Dates

October 11-15, 2004

Conference Location

Amsterdam, 1, NL

Conference Title

European Gallium Arsenide and Other Compound Semiconductors Application Symposium

Pub Type

Conferences

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Keywords

equivalent circuit model, heterojunction interband tunneling, large-signal measurement, strongly nonlinear

Citation

Camprini, M. , Cidronali, A. , Magrini, I. , Loglio, G. , Collodi, G. , Jargon, J. and Manes, G. (2005), Identification of a strongly nonlinear device compact model based on vectorial large signal measurements, The European Gallium Arsenide and Other Compound Semiconductors Application Symposium, Amsterdam, 1, NL, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=31749 (Accessed October 20, 2025)