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IC Test Structures for Multi-Layer Interconnect Stress Determination

Published

Author(s)

S. A. Smee, Michael Gaitan, Donald B. Novotny, Yogendra K. Joshi, David L. Blackburn

Abstract

A new method for measuring strain in multi-layer IC interconnects is presented. This method utilizes process compatible micromachined test structures and is applied to the determination of longitudinal interconnect stress in a standard dual-metal-layer CMOS process. Strain measurements are shown to be consistent for an array of similar test structures, and stress values, calculated from constitutive relations, are in good agreement with published results.
Citation
IEEE Electron Device Letters
Volume
21
Issue
1

Keywords

CMOS, IC, interconnect, micromachined, strain, stress, test structures

Citation

Smee, S. , Gaitan, M. , Novotny, D. , Joshi, Y. and Blackburn, D. (2000), IC Test Structures for Multi-Layer Interconnect Stress Determination, IEEE Electron Device Letters (Accessed April 19, 2024)
Created December 31, 1999, Updated October 12, 2021