Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Hyperthermal (1-10 eV) cobalt deposition on Si(100)

Published

Author(s)

M P. Knowles, S R. Leone

Abstract

Cobalt atoms with enhanced kinetic energy (0-10 eV) are deposited on room temperature Si(100) and compared to thermal cobalt deposition. Growth is monitored with Auger electron spectroscopy (AES) and low energy electron diffraction (LEED). At low coverages, δ,2ML, thermal deposition measurements agree with previous work where uptake at surface sites occurs up to approximately equal to} 0.5 ML, followed by filling subsurface sites. Auger data suggests that hyperthermal deposition occurs by direct subsurface adsorption.
Citation
Chemical Physics Letters
Volume
258
Issue
No. 1-2

Keywords

auger, cobalt, deposition, hyperthermal, silicon

Citation

Knowles, M. and Leone, S. (1996), Hyperthermal (1-10 eV) cobalt deposition on Si(100), Chemical Physics Letters (Accessed July 19, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created July 31, 1996, Updated October 12, 2021