Knowles, M.
and Leone, S.
(1996),
Hyperthermal (1-10 eV) cobalt deposition on Si(100), Chemical Physics Letters
(Accessed April 27, 2024)
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Hyperthermal (1-10 eV) cobalt deposition on Si(100)
Published
Author(s)
M P. Knowles,
Abstract
Cobalt atoms with enhanced kinetic energy (0-10 eV) are deposited on room temperature Si(100) and compared to thermal cobalt deposition. Growth is monitored with Auger electron spectroscopy (AES) and low energy electron diffraction (LEED). At low coverages, δ,2ML, thermal deposition measurements agree with previous work where uptake at surface sites occurs up to approximately equal to} 0.5 ML, followed by filling subsurface sites. Auger data suggests that hyperthermal deposition occurs by direct subsurface adsorption.Citation
Chemical Physics Letters
Volume
258
Issue
No. 1-2
Pub Type
Journals
Keywords
auger, cobalt, deposition, hyperthermal, silicon
Citation
Created July 31, 1996, Updated October 12, 2021