Horizontal Growth and In Situ Assembly of Oriented Zinc Oxide Nanowires

Published

October 1, 2004

Author(s)

Babak Nikoobakht, Chris A. Michaels, Stephan J. Stranick, Mark D. Vaudin

Abstract

The positioning and directed assembly of semiconductor nanowires (NWs) is of considerable current interest for bottom-up approaches to the engineering of intricate structures from nanoscale building blocks. We report a horizontal growth mode for ZnO NWs on the (1120) sapphire surface in which NWs grow in the [1100]sap direction. This growth mode strictly depends on the size and spacing of the Au nanodroplet catalysts and competes with the vertical growth of the NWs. An approach is presented which promotes the horizontal growth, in situ alignment, and predictable positioning of ZnO NWs. This strategy allows for the large scale assembly of NWs, control of the width of the NWs, and production of quantum NWs.

Citation

Applied Physics Letters

Volume

85

Issue

No.15

Pub Type

Journals

Keywords

assembly, horizontal nanowires, Oriented nanowires, vapor phase transport, ZnO

Citation

Nikoobakht, B. , Michaels, C. , Stranick, S. and Vaudin, M. (2004), Horizontal Growth and In Situ Assembly of Oriented Zinc Oxide Nanowires, Applied Physics Letters (Accessed May 30, 2023)