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High-Frequency Behavior of Coupled CMOS Interconnects Built in Different Metallization Layers

Published

Author(s)

Uwe Arz, Dylan Williams, Dave K. Walker, Hartmut Grabinski

Abstract

In this paper we apply a broadband measurement method to determine the propagation characteristics of coupled-line structures fabricated in different metallization layers of a 0.25 5m CMOS technology. We show that the matrices of frequency-dependent line parameters, as extracted from calibrated four-port S-parameter measurements, agree well with data predicted by numerical calculations, and discuss the impact of metal level height above the substrate on the transmission characteristics.
Proceedings Title
Tech. Dig., Automatic Radio Frequency Techniques Group (ARFTG) Conference
Volume
38
Conference Dates
November 30-December 1, 2000
Conference Location
Boulder, CO, USA

Keywords

coupled lines, lossy substrate, microstrip, silicon, transmission line

Citation

Arz, U. , Williams, D. , Walker, D. and Grabinski, H. (2000), High-Frequency Behavior of Coupled CMOS Interconnects Built in Different Metallization Layers, Tech. Dig., Automatic Radio Frequency Techniques Group (ARFTG) Conference, Boulder, CO, USA, [online], https://doi.org/10.1109/MWSYM.2000.863258, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=5950 (Accessed April 21, 2024)
Created November 30, 2000, Updated October 12, 2021