Formation of AlN and GaN nanocolumns on Si(111) using molecular beam epitaxy with ammonia as a nitrogen source

Published

January 1, 2005

Author(s)

Kristine A. Bertness, Alexana Roshko, Norman Sanford, John B. Schlager, Matthew H. Gray

Abstract

We have demonstrated growth of AlN and GaN nanocolumns using molecular beam epitaxy with ammonia as a nitrogen source. The appearance of the columnar structure is correlated with the use of a lowtemperature AlN buffer layer, grown at about 650 'C. Field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM) indicate that the column diameters range from 12 to 30 nm. Layers were grown on Si(111) substrates with a variety of AlN buffer layer growth conditions. The AlN columns are distinct though tightly packed, and the tips of the columns are separated. Large, platelet-like protrusions are observed for low growth temperatures. Results from X-ray diffraction (XRD) and lowtemperature photoluminescence (PL) are also discussed.

Citation

Physica Status Solidi

Volume

2

Issue

7

Pub Type

Journals

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Keywords

buffer layer, group III-nitrides, molecular beam epitaxy, nanostructured materials, semiconductor crystal growth

Citation

Bertness, K. , Roshko, A. , Sanford, N. , Schlager, J. and Gray, M. (2005), Formation of AlN and GaN nanocolumns on Si(111) using molecular beam epitaxy with ammonia as a nitrogen source, Physica Status Solidi, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=31759 (Accessed October 14, 2025)