Fabrication and Thermal-Chemical Stability of Magnetoresistive Random Access Memory Cells Using α-Fe2O3 Bottom Spin-Valves

Published

November 1, 2001

Author(s)

William F. Egelhoff Jr., S Bae, P J. Chen, J H. Judy, L Sheppard, E J. Torok, S Zurn

Abstract

The fabrication stability and device characteristics of Si/ -Fe2O3 (25nm) / Co (3nm) / Cu (2.3nm) / Co (3.1nm) / Ta2O5 (2.5nm) GMR spin-valve magnetoresistive random access memory (MRAM) cells with 6 m wide and 18 m long in dimension are presented. Fabricated single but and 3x3 bit MRAM cells had very good GMR performance for MRAM characteristics and excellent endurance in undergoing standard high temperature semiconductor processes. The high thermal and chemical stability of -Fe2O3 bottom GMR spin-valve MRAM cell using SPICE device model elements are introduced for the first time. The SPICE model is useful for predicting the MRAM device characteristics related to the speed and power dissipation under different MRAM bit array and various operating conditions.

Citation

IEEE Transactions on Magnetics

Volume

37

Issue

No. 6

Pub Type

Journals

Keywords

-Fe2O3 GMR spin value, giant magnetoresistive, MRAM, MRAM fabrication, SPICE modeling, thermal and chemical stability

Citation

Egelhoff, W. , Bae, S. , Chen, P. , Judy, J. , Sheppard, L. , Torok, E. and Zurn, S. (2001), Fabrication and Thermal-Chemical Stability of Magnetoresistive Random Access Memory Cells Using α-Fe2O3 Bottom Spin-Valves, IEEE Transactions on Magnetics (Accessed October 16, 2025)