External Radiative Quantum Efficiency of 96 % from a GaAs/GaInP Heterostructure
H G. Gauck, T H. Gforerer, M J. Renn, Eric A. Cornell, Kristine A. Bertness
GaAs/GaInP double heterostructures are index matched with ZnSe hemispheres to increase the coupling of photoluminescence out of the device. We measure external quantum efficiencies as large as 96 % using a bolometric calibration technique. When the carriers are optically injected near the bandgap energy, the luminescence is blushifted by up to 1.4 kT. In this case, external efficiencies exceeding 97.5 % would yield optical refrigeration in the solid state.
Applied Physics A-Materials Science & Processing
laser cooling, photoluminescence, semiconductors
, Gforerer, T.
, Renn, M.
, Cornell, E.
and Bertness, K.
External Radiative Quantum Efficiency of 96 % from a GaAs/GaInP Heterostructure, Applied Physics A-Materials Science & Processing
(Accessed November 29, 2023)