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External Radiative Quantum Efficiency of 96 % from a GaAs/GaInP Heterostructure

Published

Author(s)

H G. Gauck, T H. Gforerer, M J. Renn, Eric A. Cornell, Kristine A. Bertness

Abstract

GaAs/GaInP double heterostructures are index matched with ZnSe hemispheres to increase the coupling of photoluminescence out of the device. We measure external quantum efficiencies as large as 96 % using a bolometric calibration technique. When the carriers are optically injected near the bandgap energy, the luminescence is blushifted by up to 1.4 kT. In this case, external efficiencies exceeding 97.5 % would yield optical refrigeration in the solid state.
Citation
Applied Physics A-Materials Science & Processing
Volume
64

Keywords

laser cooling, photoluminescence, semiconductors

Citation

Gauck, H. , Gforerer, T. , Renn, M. , Cornell, E. and Bertness, K. (1999), External Radiative Quantum Efficiency of 96 % from a GaAs/GaInP Heterostructure, Applied Physics A-Materials Science & Processing (Accessed May 24, 2024)

Issues

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Created February 28, 1999, Updated October 12, 2021