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Extended X-Ray Absorption Fine-Structure Measurement of Bond-Length Strain in Epitaxial Gd203 on GaAs (001)

Published

Author(s)

E J. Nelson, Joseph C. Woicik, M Hong, JP Mannaerts

Abstract

Extended x-ray absorption fine structure (EXAFS) has been used to measure the bond length in a 23 epitaxial Gd2O3 film grown on GaAs(001). The Gd-O bond length is determined to be 2.390 0.013 or a bond-length strain of +2.7 0.6 % relative to the bond length in bulk Gd2O3 powder. Using a simple model for the strained film that matches the [001] and [-110] axes of Gd2O3 with the [110] and [1-10] axes of the GaAs(001) surface, the measured bond-strength increase of the film determined by EXAFS agrees well with the perpendicular lattice distortion of the film determined by diffraction. The absence of a polarization dependence of the EXAFS suggests similar lattice strains along the in-surface [-110] and out-of-surface normal [110] directions of the Gd2O3 film.
Citation
Applied Physics Letters
Volume
76
Issue
No. 18

Keywords

bond-length, extended x-ray absorption fine structure, metal-oxide-semiconductor

Citation

Nelson, E. , Woicik, J. , Hong, M. and Mannaerts, J. (2000), Extended X-Ray Absorption Fine-Structure Measurement of Bond-Length Strain in Epitaxial Gd<sub>2</sub>0<sub>3</sub> on GaAs (001), Applied Physics Letters (Accessed March 4, 2024)
Created May 1, 2000, Updated February 19, 2017