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Exploring the First High Entropy Thin Film Libraries: Composition spread-controlled Crystalline Structure

Published

Author(s)

Thi X. Nguyen, Yen-Hsun Su, Jason Hattrick-Simpers, Takahiro Nagata, Howard Joress, Kao-Shuo Chang, Suchismita Sarker, Apurva Mehta, Jyh-Ming Ting

Abstract

Thin films of two types of high-entropy oxides (HEOs) have been deposited on 76.2 mm Si wafers using combinatorial sputter deposition. In one type of the oxides, (MgZnMnCoNi)Ox, all the metals have a stable divalent oxidation state and similar cationic radii. In the second type of oxides, (CrFeMnCoNi)Ox, the metals are more diverse in the atomic radius and valence state, and have good solubility in their sub-binary and ternary oxide systems. The resulting HEO thin films were characterized using several high-throughput analytical techniques. The microstructure, composition, and electrical conductivity obtained on defined grid maps were obtained for the first time across large compositional ranges. The crystalline structure of the films was observed as a function of the metallic elements in the composition spreads, that is, the Mn and Zn in (MgZnMnCoNi)Ox and Mn and Ni in (CrFeMnCoNi)Ox. The (MgZnMnCoNi)O ...
Citation
ACS Combinatorial Science
Volume
22
Issue
12

Keywords

High entropy oxide, Combinatorial sputter deposition, high-throughput analysis, Composition-controlled crystalline structure

Citation

Nguyen, T. , Su, Y. , Hattrick-Simpers, J. , Nagata, T. , Joress, H. , Chang, K. , Sarker, S. , Mehta, A. and Ting, J. (2021), Exploring the First High Entropy Thin Film Libraries: Composition spread-controlled Crystalline Structure, ACS Combinatorial Science, [online], https://doi.org/10.1021/acscombsci.0c00159, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=930970 (Accessed September 18, 2021)
Created March 19, 2021, Updated April 6, 2021